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PV cell utilises GaN

The development of a PV cell which utilises a mix of GaN and manganese semiconductors could help improve the bandwidth of conversion.
The production of a new photovoltaic (PV) cell which uses gallium nitride (GaN) compound semiconductors has been announced by a Japanese research group.

Led by Saki Sonoda, associate professor at the Kyoto Institute of Technology, the research team claimed it could improve the energy output of PV cells through the combination of manganese and GaN to increase the bandwidth of light which it can convert to electricity.

The team said that at present, open voltages are high at approximately two volts on average, but energy conversion rates remain disappointing - a situation which it hopes to rectify in the near future.

Research carried out by the team found that following the introduction of manganese to GaN the product was able to convert a wider wavelength band of light including ultraviolet, visible and infrared.

The Kyoto Institute of Technology presently has in excess of 2,700 students enrolled and operates an international exchange programme, providing opportunities to people across the globe to take part in research projects such as this.
ADNFCR-2855-ID-19684785-ADNFCR
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