News Article
GCS announces new THz diode process for mm-wave applications
Based on the planar Schottky diode, the monolithic process has MIM capacitor, spiral inductor, thin film resistor and backside via features and is now offered as a standard foundry process.
California based III-V compound semiconductor wafer foundry Global Communication Semiconductors (GCS) says that its proprietary Terahertz diode MMIC foundry process can now address millimeter-wave transceiver requirements. "Up until now, THz diode has only been available as a discrete device. The integration of a discrete THz diode into a circuit assembly with other active and passive components required wire bonding. Although this approach was not desired, it was unavoidable for many millimeter-wave applications due to the lack of a monolithic solution," commented Jerry Curtis, CEO of GCS. "The THz diode process has been demonstrated as a mixer in a W-Band up-converter with a conversion loss of 6 dB, with a LO frequency of 91.8GHz (12 dBm) and an IF of 2.25 GHz. The process is ideal for applications in mm-wave frequency transceivers, as well as Terahertz imaging systems," added Mr. Curtis.
