Toshiba targets its GaAs FETS at microwave radios
Toshiba has expanded its gallium arsenide field effect transistor (GaAs FET) lineup with a new "EL" series of C-Band devices optimized for high gain and power added efficiency. "Toshiba's new EL series offers the highest level of performance of our three series of C-Band GaAs FETs, with both high power added efficiency and high gain," said Homayoun Ghani, Business Development Manager of ‘Microwave, Logic, and Small Signal Devices’, in TAEC's Discrete Business Unit. "We also offer a 'UL' series with medium power added efficiency and gain, and the 'SL' series, the standard performance level for this wavelength," he added. The SL and UL series also have 16W modules. 
"With these high gain FETs and a newly developed 4W monolithic microwave integrated circuit (MMIC), also introduced during this exhibition, we offer a two-chip solution for microwave radio design. It eliminates the requirement for a mid-stage 4W discrete FET typically used in existing three-chip solutions, improves design flexibility, and saves board space and cost by reducing part count." The first three devices in the "EL" series are 16W GaAs FETS targeted for three different C-Band frequency ranges and their specifications are given below:
Technical Specifications of 50W TGI7785-50L GaN HEMT
Product Characteristics TIM6472-16E L TIM7179 - 16E L TIM7785 -16E L
Frequency 6.4 - 7.2 GHz 7.1 - 7.9 GH 7.7 - 8.5 GHz
Band C-Band C-Band C-Band
Output Power, P1dB (typ.) 42.5dBm 42.5dBm 42.5dBm
Power Gain, G1dB (typ.) 11.0dB 10.5dB 10.0dB
Power Added Efficiency, ηadd 37% 36% 36%
Compared to the 16W devices in the SL and UL ranges, the TIM6472-16E L offers a 4.0dB and 1.5dB increase in gain (typ.) respectively. The TIM7179-16EL offers a 4.0dB increase in gain (typ.) over the TIM7179-16SL and an increase of 2.0dB compared to the TIM7179-16UL. The TIM7785-16EL offers a 4.5dB increase in gain compared to the TIM7785-16SL, and an increase of 1.5dB compared to the TIM7785-16UL. Samples of the Toshiba Power Added Efficiency GaAS FET family are available now.
