Toshiba GaAs FETs stretch the Ku-Band
Toshiba has expanded its Ku-Band gallium arsenide field effect transistor (GaAs FETs) lineup with two higher output power devices rated for 18 and 30 watts (W).
The new power amplifier GaAs FETs will be exhibited in TAEC's booth, #813, at the 2010 IEEE MTT-S International Microwave Symposium between May 25- May 27 in Anaheim, California.
The TIM1213-18L and TIM1213-30L operate in the 12.7 to 13.2 GHz range, and are suited for use in microwave radios for microwave links and satellite communications.
The products are summarized below:
Technical Specifications 50W TGI7785-50L GaN HEMT
Product Characteristics TIM1213-18L TIM1213-30L
Frequency 12.7-13.2GHz 12.7-13.2GHz
Band Ku-Band Ku-Band
Output Power, P(1dB)(typ.) 42.5dBm 45.0dBm
Power Gain, G(1dB)(typ.) 6.0dB 5.5dB
Power Added Efficiency 28% 23%
Other current Toshiba GaAs FETs in this frequency range feature 2W, 4W, 8W, 10W and 15W power output ratings.
"Continuing our long tradition of developing higher power amplifiers as technology advances, Toshiba is expanding our Ku-Band product family with these new devices to enable our customers to design more powerful and linear microwave radios with fewer components," said Homayoun Ghani, Business Development Manager of ‘Microwave, Logic, and Small Signal Devices’ in TAEC's Discrete Business Unit.
Samples of the TIM1213-18L and TIM1213-30L are available now.
