News Article
World first for Integra
New high-voltage GaN chips developed by Integra.
Integra Technologies has developed a new form of high-voltage gallium nitride (GaN)-on-silicon technology, it has been revealed.
The firm has launched two new products - IGN2731M25 and IGN2731M50 - that are the first devices capable of processing with drain-source breakdowns exceeding 200 volts.
As a result, the company has claimed these are the first GaN-on-silicon chips capable of achieving this and, as a result, deliver higher performance than other products that are presently on the market.
John Titizian, the company's founder and president, said: "Integra is excited by this new technology that allows us to penetrate new markets involving CW applications such as electronics warfare for the defence industry."
Integra was founded in February 1997 and operates in the high-power radio frequency semiconductor industry. Its product portfolio covers radar bands in the UHF/VHF, L-band, S-band and C-band for commercial, military and defence markets.
