News Article
ISCAS Orders Two Aixtron MOCVD Tools for GaN Device Growth
The 3x2-inch and 8x3-inch reactors will be used for the manufacture of electronic devices and red LEDs.
Aixtron SE has a new order for MOCVD reactors from existing customer, the Institute of Semiconductors Chinese Academy of Sciences (ISCAS).
The order comprises one AIX 200/4 in the 3x2-inch wafer configuration and one AIX 2600G3 IC in the 8x3-inch wafer configuration.
The Beijing, PR China based institute placed the order during the third quarter of 2010 and following delivery in the second quarter of 2011, the systems will be used for production of electronic devices and red LEDs. The local Aixtron support team will commission the new reactors in a dedicated facility.
A spokesperson commented, “This is a repeat order for us and over half a decade we have formed a good long-term relationship with the Aixtron group. We are convinced that these Aixtron systems will help us to achieve a very high standard of results for R&D in these key technology areas. We have been impressed in initial trials how effectively and easy it has been to scale up device processes from our existing deposition systems to the new Aixtron systems.”
“Our relationship with Aixtron began way back in 2003 when ISCAS expanded its R&D capabilities installing a state-of-the-art Close Coupled Showerhead (CCS) MOCVD reactor. That 3x2-inch reactor enabled us to grow high quality GaN on sapphire layers on 4-inch wafers as well as GaN on Silicon primarily for the development of short-wavelength laser diodes and UV photo-detector based devices.”
The Institute of Semiconductors was among the first institutions/universities in China, authorised to offer master and doctoral degrees and to introduce postdoctoral research stations. Currently, it runs three postdoctoral stations, four doctoral and five master programs. It has made great and significant contributions to developing Chinese semiconductor science and technology and is expected to make many more splendid achievements in the future.
