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Samsung Selects Veeco MOCVD Tool For GaN Power Electronics

Veeco is looking forward to continuing to work with SAIT to commercialise this technology for high volume manufacturing of GaN-based power electronic devices.

 

Veeco Instruments has announced that Samsung Advanced Institute of Technology (SAIT) in Korea has selected its K465i Gallium Nitride (GaN) Metal Organic Chemical Vapour Deposition (MOCVD) System for advanced GaN on Si research for power electronics.

 

According to William J. Mille, Executive VP of Veeco's Compound Semiconductor Business, "Being selected as a research partner for GaN on Si by SAIT is an important strategic R&D win for Veeco. We look forward to continuing to work with SAIT to commercialise this technology for high volume manufacturing of GaN-based power electronic devices."

 

"The GaN power electronics market is expected to grow significantly in coming years, with potential applications in energy-efficient power conversion devices," according to Jim Jenson, VP of Marketing for Veeco's Compound Semiconductor Business.

 

The K465i incorporates Veeco's Uniform FlowFlange technology for excellent uniformity and run-to-run repeatability. Low maintenance TurboDisc technology enables highest system availability, excellent particle performance and high throughput. The K465i provides ease-of-tuning for fast process optimisation on wafer sizes up to 8 inches and fast tool recovery time after maintenance.
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