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Keithley launches power system meter for CS device characterisation

The “breakthrough” 2651A can characterise GaN, SIC, and other compound semiconductor materials and devices and provide data on semiconductor junction temperature characteristics.

Keithley has introduced the 2651A High Power System SourceMetre Instrument which it claims offers breakthrough capabilities for testing the latest high power electronics, semiconductors, and materials.

 



The 2651A instrument addresses a wide range of applications including power semiconductor, HBLED, and optical device characterisation and testing. It can also characterise GaN, SIC, and other compound semiconductor materials and devices and provide data on semiconductor junction temperature characteristics. Operating at a high speed and with high precision digitisation, it is capable of high current and high power device testing and can also be used for electromigration studies.

With a broad dynamic range, the machine has the ability to source or sink up to 2,000W of pulsed power (±40V, ±50A), or 200W of DC power (±10V@±20A, ±20V@±10A, ±40V@±5A).

 



The 2651A current sourcing and measurement is 1pA to 50A (100A with two units). It can test a wider range of power semiconductors and other devices than previous models and has two measurement modes in a single high power/high current instrument.

 



It also has dual A/D converters for each measurement mode and enables full simultaneous characterisation and measurement of both current and voltage waveforms. The Keithley 2651A is fully isolated and has independent channels with 500nSec synchronisation and provides easier, faster, and more flexible connection and grounding schemes that enable true SMU-per-pin testing in multi-channel applications.

 



 
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