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GT Solar launches ASF100 sapphire growth system

The new advanced system increases yielded output of high quality sapphire material.

GT Solar International, a global provider of sapphire and silicon crystalline growth systems and materials for the solar, LED and other specialty markets, has revealed the ASF100 advanced sapphire growth system.

 



 

The ASF100 increases yielded output of sapphire material by producing a larger, 100 kilogram sapphire boule in the same chamber as previous versions of the furnace.

“We have received an enthusiastic response from early adopter customers for our ASF sapphire growth systems as they enter the market to provide high quality sapphire material for the fast-growing LED industry,” said Cheryl Diuguid, vice president and general manager of GT Solar’s sapphire equipment and materials group. “Our advanced sapphire crystallisation systems are built on a highly scalable and reliable architecture that lets customers quickly ramp to volume production with a lower capital investment compared with other competing crystallisation technologies.”

With over 40 years of proven sapphire production and crystalline growth process technology, the ASF100 provides a highly automated, low risk operating environment, capable of producing consistently uniform sapphire boules that yield high quality material ideally suited for high brightness (HB) LED applications. “With competing crystallisation technologies customers entering the sapphire crystallisation market are forced to choose between systems that provided quality or systems that offer high throughput,” continued Diuguid. “Our ASF100 offers high quality and high volume so customers get both in one system.”

Since the commercial introduction of the ASF system in the fall of 2010, GT has booked more than $450 million in orders from new entrants and existing sapphire producers. The ASF100 advanced sapphire furnace offers a proven path to producing high-quality, large-area sapphire substrates for markets that demand the highest grade material.
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