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News Article

M/A-COM Tech extends portfolio with high power GaN HEMTs

With its new gallium nitride transistors, the firm is targeting L- and S-Band pulsed radar applications.


M/A-COM Technology Solutions is introducing a new family of GaN RF Power transistors.


The announcement was made at MTT-S 2011, one of the largest RF & Microwave Product Exhibition in the industry. This new family of products targets L- and S-Band pulsed radar applications and leverages M/A-COM Tech’s rich heritage of providing both standard and custom solutions.


M/A-COM Tech’s GaN on Silicon Carbide (GaN-on-SiC) products, offered as transistors and pallets,utilise a 0.5 µm HEMT process and exhibit attractive RF performance parameters with respect to power, gain, gain flatness, efficiency and ruggedness over wide-operating bandwidths. Featured benefits of M/A-COM Tech’s GaN products include high breakdown voltage, superior power density, and higher and broader frequency operation than silicon.


A list of the new products is given  below.


 


Part Number                                          Frequency (MHz)       Pout (W)                    Pulse/Duty


MAGX-002731-030L00                             2700 - 3100                30 peak                      500µs / 10%


MAGX-002731-100L00                             2700 - 3100                100 peak                    500µs / 10%


MAGX-002731-180L00                             2700 - 3100                180 peak                    500µs / 10%


MAGX-003135-030L00                             3100 - 3500                30 peak                      500µs / 10%


MAGX-003135-180L00                             3100 - 3500                180 peak                    500µs / 10%


MAGX-000912-125L00                             960 - 1215                  125 peak                    2ms / 10%


MAGX-000912-250L00                             960 - 1215                  250 peak                    2ms / 10%


MAGX-001214-125L00                             1200 - 1400                125 peak                    2ms / 10%


MAGX-001214-250L00                             1200 - 1400                250 peak                    2ms / 10%


MAGX-001220-100L00                             1200 - 2000                100 peak                    500µs / 10%


MAGX-000035-030000                             1 - 3500                      30 average                  CW


MAGX-000035-100000                             1 - 3500                      100 average                CW

 

“M/A-COM Tech leverages more than 30 years of experience in developing industry-leading high power transistors to deliver these top-quality GaN power devices,” stated Chuck Bland, Chief Executive Officer of M/A-COM Tech. “Our highly versatile family of GaN products offers customers a single solution combining both the high power handling and high-voltage operation typically found in silicon LDMOS devices, but with higher frequency performance more often associated with GaAs devices. Innovative solutions for demanding applications like these are what customers have come to expect from the First Name in Microwave—M/A-COM Tech.”

The latest ABI research shows increasing demand for high power, pulsed RF devices in S- and L-band air traffic control, marine, and military radar applications. “M/A-COM Technology Solutions’ silicon based products have been a major force for high power, pulsed RF applications in the S- and L-Band radar market, and the extension into GaN technology positions their product line for continued market leadership", said Lance Wilson, Research Director, RF Components & Systems.

M/A-COM Tech plans to release additional products that target applications such as L-Band radar, avionics, EW, and MILCOM, as well as general purpose devices later this year.

Engineering samples for GaN transistors and pallets are available for qualified customers today from stock although the products are subject to the jurisdiction of the Export Administration Regulations.

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