M/A-COM Tech extends portfolio with high power GaN HEMTs
M/A-COM Technology Solutions is introducing a new family of GaN RF Power transistors.
The announcement was made at MTT-S 2011, one of the largest RF & Microwave Product Exhibition in the industry. This new family of products targets L- and S-Band pulsed radar applications and leverages M/A-COM Tech’s rich heritage of providing both standard and custom solutions.
M/A-COM Tech’s GaN on Silicon Carbide (GaN-on-SiC) products, offered as transistors and pallets,utilise a 0.5 µm HEMT process and exhibit attractive RF performance parameters with respect to power, gain, gain flatness, efficiency and ruggedness over wide-operating bandwidths. Featured benefits of M/A-COM Tech’s GaN products include high breakdown voltage, superior power density, and higher and broader frequency operation than silicon.
A list of the new products is given below.
Part Number Frequency (MHz) Pout (W) Pulse/Duty
MAGX-002731-030L00 2700 - 3100 30 peak 500µs / 10%
MAGX-002731-100L00 2700 - 3100 100 peak 500µs / 10%
MAGX-002731-180L00 2700 - 3100 180 peak 500µs / 10%
MAGX-003135-030L00 3100 - 3500 30 peak 500µs / 10%
MAGX-003135-180L00 3100 - 3500 180 peak 500µs / 10%
MAGX-000912-125L00 960 - 1215 125 peak 2ms / 10%
MAGX-000912-250L00 960 - 1215 250 peak 2ms / 10%
MAGX-001214-125L00 1200 - 1400 125 peak 2ms / 10%
MAGX-001214-250L00 1200 - 1400 250 peak 2ms / 10%
MAGX-001220-100L00 1200 - 2000 100 peak 500µs / 10%
MAGX-000035-030000 1 - 3500 30 average CW
MAGX-000035-100000 1 - 3500 100 average CW
“M/A-COM Tech leverages more than 30 years of experience in developing industry-leading high power transistors to deliver these top-quality GaN power devices,” stated Chuck Bland, Chief Executive Officer of M/A-COM Tech. “Our highly versatile family of GaN products offers customers a single solution combining both the high power handling and high-voltage operation typically found in silicon LDMOS devices, but with higher frequency performance more often associated with GaAs devices. Innovative solutions for demanding applications like these are what customers have come to expect from the First Name in Microwave—M/A-COM Tech.”
The latest ABI research shows increasing demand for high power, pulsed RF devices in S- and L-band air traffic control, marine, and military radar applications. “M/A-COM Technology Solutions’ silicon based products have been a major force for high power, pulsed RF applications in the S- and L-Band radar market, and the extension into GaN technology positions their product line for continued market leadership", said Lance Wilson, Research Director, RF Components & Systems.
M/A-COM Tech plans to release additional products that target applications such as L-Band radar, avionics, EW, and MILCOM, as well as general purpose devices later this year.
Engineering samples for GaN transistors and pallets are available for qualified customers today from stock although the products are subject to the jurisdiction of the Export Administration Regulations.