News Article
Integra introduces GaN-on-SiC broadband devices
The firm’s gallium nitride on silicon carbide RF devices are targeting broadband applications ranging from 30-512MHz to 100-1000MHz.
Integra Technologies, Inc. (ITI), a manufacturer of high power pulsed RF transistors, has developed two GaN on SiC technology devices targeted for the military communication market.
Integra has launched several new products characterised for broadband applications ranging from 30-512MHz to 100-1000MHz.
"Integra is excited by this new technology that allows us to penetrate new markets involving CW applications such as Electronic Warfare (EW) for the defence industry." says Brian D. Battaglia, Director of Sales and Marketing at Integra, describing the development effort. "GaN technology inherently is broadbandable with the inherent low parasitic capacitance. The GaN technology development effort is a direct result of customer requests for smaller, more efficient power devices with broadband performance."
About the IGN12UM21A1, IGN25UM21A1 and IGN50UM21A1
Intended for commercial broadband communication applications including EW jammers, the devices provide a range of output power from 12W, 25W and 50W. The unmatched devices provide over 15dB of gain and 55% efficiency. The devices are housed in a small single ended ceramic flanged package providing excellent thermal advantages.
About the IGN24UM22D1, IGN50UM22D1, IGN100UM22D1 and IGN200UM22D1
Intended for commercial broadband communication applications including EW jammers, the unmatched devices provide a range of output power from 25W to over 200W in a dual lead push-pull configuration ceramic package.
About the IGN25UM72A1, IGN50UM72A1, IGN100UM72A1 and IGN200UM72A1
Intended for commercial broadband communication applications including EW jammers, the unmatched devices provide a range of output power from 25W to over 200W in a low parasitic wide lead ceramic package.
Samples and Availability
All IGNxxxxxxxx devices are available for immediate sampling.
