News Article
Imec scientists impress at E-MRS and VLSI
Researchers based at the Belgian research institute have been acknowledged for their contributions to semiconductor technology.
At the European Materials Research Society (E-MRS) 2011 Spring Meeting, Liyang Zhang has received the Young Scientist Award for her paper ‘Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures’, contributed to the Symposium on group III nitrides and their heterostructures for electronics and photonics.
In this work, the authors present the results of a study on the impact of polarisation on multiple quantum wells (MQWs) revealed by the optical performance by photoluminescence measurements. In addition to the traditional InGaN/GaN MQWs, they also demonstrate InxGa1-xN/InyGa1-yN MQWs. The MQWs were grown on sapphire substrates by MOVPE. Co-authors of the paper are K. Cheng, H. Liang, R. Lieten, M. Leys and G. Borghs.
The paper ‘1mA/µm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D’ by Jerome Mitard et al from K.U.Leuven,has been selected as one of the technical highlights of the 2011 Symposium on VLSI Technology and Circuits. The paper reports the successful integration of a strained SiGe45% implant free quantum well pFET with embedded SiGe25%-source/drain. The results suggest that the SiGe-IFQW with embedded S/D is a viable device option for the 16nm technological node and beyond. The work was co-authored by researchers based at and imec and K.U. Leuven.
