News Article
BeRex unveils GaAs PHEMT FET chips for RF apps
The BCP-Series gallium arsenide based devices up to 26 GHz, are immediately available. The series also includes devices for wideband (6-18 GHz) or narrowband RF applications.
BeRex high performance BCP-series of GaAs PHEMT FET chips featuring a nominal gate length of 0.25µm, are now available in gate widths of 200, 300, 600, 800, 1200, 1600 or 2400µm.
These chips are available in bare-die form and provide low noise, high gain, and excellent power added efficiency making them ideal for low noise amplifiers, satellite communications, high reliability and other demanding applications. They are especially well suited for either wideband (6-18 GHz) or narrowband applications. The BCP-series chips are produced using state of the art metallisation and SI3N4 passivation to assure the highest reliability.
“BeRex, Inc. is committed to being a dominate player in providing high performance PHEMT devices. Our company’s Silicon Valley location has allowed us to assemble a “dream team” of highly experienced PHEMT designers, quality and applications engineers, all of whom are focussed on providing our clients with the highest quality parts, consistently and reliably”, commented Alex Yoo, Vice President of Research and Development.
