News Article
EPC adds another eGaN FET to its family
The second generation 40 Volt, 16 milliohm EPC2014 gallium nitride transistor delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.
Efficient Power Conversion Corporation is introducing the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET family.
The EPC2014 is environmentally friendly, being lead free, RoHS-compliant, and halogen free.
The EPC2014 FET is a 1.87 mm2, 40 VDS, 10 A device with a maximum RDS(ON) of 16 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150 degrees C and is fully enhanced at a lower gate voltage than the predecessor EPC1014.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
“In addition to increases in performance, this new generation enhancement mode gallium nitride FET is offered as lead-free, halogen-free and RoHS-compliant,” noted Alex Lidow, co-founder and CEO.
In 1k piece quantities, the EPC2014 is priced at $1.12 and is immediately available through Digi-Key Corporation.
