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Forepi to boost HB blue LED capacity with Aixtron

The Taiwanese company has ordered a number of CRIUS II reactors for gallium nitride LED production.

Aixtron SE has a new multiple tool order for 55x2-inch CRIUS II systems from existing customer Forepi.

The new systems will be dedicated to the volume production of materials for high brightness blue LEDs. The system order came in the first quarter of 2011 and delivery takes place in the period between the second and fourth quarters of 2011.

One of Aixtron´s local support teams will install and commission the new reactors in the company’s state-of-the-art production complex in Taiwan.

Forepi President, Fen Ren Chien, comments, “Our technical team has great confidence in Aixtron technology and the CRIUS II will give us much needed enlarged production capacity. Since the CRIUS II has grown from 31x2-inch to 55x2-inch wafers, the new reactors will play a key role in our future expansion plans for HB blue LED production.”

“I have been extremely pleased with the performance of our existing Aixtron MOCVD production systems and the high quality of service the local team has given us. Once we had built up experience with our single CRIUS II, we quickly decided to ramp up production with further CRIUS II reactors so as to benefit from the technical advantages of the Aixtron next-generation Close Coupled Showerhead (CCS) technology. The CRIUS II gives us the highest growth rates and growth pressure as well as zero particle generation and minimised maintenance. Having even better performance along with increased capacity made ordering more of the latest generation reactor a simple decision.”


Bernd Schulte, COO at Aixtron, adds, “The Aixtron CRIUS series continues to build on its solid worldwide reputation for process economics, control and uptime. Its unique CCS reactor chamber technology only requires the application of area-scaling factors for simple process transfer which is particularly useful for customers like Forepi. The CRIUS II can, if required, be upscaled to larger wafer sizes, which is crucial for control of GaN LED manufacturing costs. Alternatively, the reactor chamber can accommodate as many as 13x4-inch wafers.”
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