News Article
RFMD reveals 280W GaN wideband pulsed PA
The 50V RFHA1020 power amplifier incorporates the firm’s advanced gallium nitride HEMT technology.
RFMD is marketing another high power discrete amplifier for L-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications.
RFHA1020 Power Amplifier
The 50V RFHA1020 is a high terminal impedance matched power transistor providing 280W with 55% drain efficiency, packaged in a hermetic, flanged ceramic package that provides excellent thermal stability with advanced heat sink and power dissipation technologies.
Ease of integration is accomplished through the incorporation of single, optimised matching networks that provide wideband gain and power performance in a single amplifier covering the 1.2GHz to 1.4GHz frequency band.
The device has an evaluation board layout optimised for 50Ω operation. It has a pulse width of 100µs, a duty cycle of 10% and a small signal gain of 15dB.
The RFHA1020 is now available.
