News Article
Si/SiC hybrid IGBT modules from Powerex
The low profile modules which feature a silicon carbide Schottky diode are designed for use in high frequency applications.
Combining the NFH-Series Powerex IGBT and a zero recovery Schottky diode, Powerex is now offering split dual Si/SiC hybrid IGBT modules.
The QID1210005 and QID1210006 are designed for use in high frequency applications above 30kHz for hard switching applications and 60 to 80 kHz for soft switching applications.
Each module consists of two IGBT transistors, with each transistor having a reverse-connected zero recovery free-wheel SiC Schottky diode. A 30% decrease in switching losses result from this innovative design. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
QID1210005 and QID1210006 boast a very low profile and can be easily reconfigured. In total, five different configurations are possible: independent; as a dual; in parallel; common collector; and common emitter.
Rated at 100A/1200V, the QID1210005 and QID1210006 feature a low ESW (off), AlN isolation and a low internal inductance. With two individual switches per module, the device has an isolated baseplate for easy heat sinking. The QID1210005 has a copper baseplate and the QID1210006 has an AlSiC baseplate for an extended thermal cycle life.
These hybrid modules can be used in applications, including energy saving power systems, such as fans, pumps and consumer appliances and high frequency type power systems, such as UPS, high speed motor drives, induction heating, welder and robotics. Other applications include high temperature power systems, such as power electronics in electric vehicle and aviation systems.
Standard Powerex NFH gate drivers can be used with the split dual Si/SiC Hybrid IGBT modules.
