News Article
Multipurpose GaN PA for 50MHz to 1000MHz
RFMD’s 15W gallium nitride wideband power amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidth in a single amplifier design.
RFMD’s RFHA1000 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification.
Using an advanced high power density GaN semiconductor process, this high-performance amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidth in a single amplifier design.
This GaN discrete amplifier is 50Ω input-matched, and packaged in a small form factor 5x6mm SOIC-8 outline air cavity ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
Ease of integration is accomplished through the incorporation of an optimised input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimising power and efficiency for any sub-band within the overall bandwidth.
The advanced GaN HEMT employs heat sink technology and operates at 28V and an output power of 15W. With a gain of 17dB, a power added efficiency of 60% and EAR99 export control, large-signal models are available.
