News Article
C-band gallium nitride HEMTS for satellite Earth stations
With more than 43% of power added efficiency, the devices have power outputs of 100W and 50W and feature 40V high-voltage operation.
Mitsubishi Electric Corporation has developed two GaN High-Electron Mobility Transistor (HEMT) C-band (4-8GHz) amplifiers for satellite earth stations.
The firm says its MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a sample basis beginning January 10, 2012.
Left: MGFC50G5867 Right: MGFC47G5867
GaAs amplifiers have been commonly employed in microwave power transmitters. In recent years, however, GaN amplifiers have become increasingly popular due to their high breakdown-voltage and power density, high saturated electron speed and ability to contribute to power saving and the downsizing of power transmitter equipment.
Mitsubishi Electric first began sample shipments of high-output GaN HEMT amplifiers for C-band space application in March 2010.
With more than 43% of power added efficiency, the modules feature 40V high-voltage operation. The internally impedance-matched devices have a low distortion with an output power meeting 3rd-order Inter Modulation (IM3) of -25dBc of 46dBm.
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