News Article
EPC's eGaN FET is a leading product
The firm's enhancement mode gallium nitride (eGaN) transistor is being adopted by customers as higher performance replacements for silicon-based MOSFETs
Efficient Power Conversion Corporation (EPC) has been honoured with a "Leading Product Award" by EDN China Innovation Award 2011 in its Power Device and Module category.
In its seventh year, the EDN China Innovation Award 2011 is a benchmark event for recognising product innovation by China’s electronics design engineers and managers.
“It is an honour to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” commented Alex Lidow, CEO of EPC.
EPC2010
EPC2010 is EPC’s second-generation 200 Volt enhancement mode gallium nitride (eGaN) power transistor with high frequency switching, enhanced performance in a lead-free, RoHS package.
The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. It has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.
EPC says that compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include RF envelope tracking, wireless power transmission, high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
