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NGK reveals GaN substrates for use in HB-LEDs

The gallium nitride wafers, grown by a novel LPE technique, could be used in business projectors and vehicle headlights

 Japanese firm, NGK Insulators, has developed new wafer products for electronic device applications, such as ultra high brightness (UHB) LEDs and smartphones. The Company exhibited samples of these wafers for the first time at SEMICON Japan 2011, which was held between December 7 through 9 at Makuhari Messe in Chiba, Japan. NGK targets wafer products as a major research and development theme in the electronics field. In the R&D line-up, there are bonded wafers that achieve new functions previously unavailable with a single material wafer, and GaN single crystal wafers that have low defect density and colourless transparency over the whole wafer surface. Ideal for use in UHB-LEDs, this innovative feature is realised by original liquid phase epitaxial growth technology. NGK reckons its GaN wafer has an unprecedented high, efficient luminescence, which makes UHB-LEDs applicable for business projectors and headlights of automobiles. Application for power devices used in hybrid and electric vehicles is also anticipated. The Company has also accelerated the development of wafer products including wafers for next-generation semiconductors which do not include rare metals.

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