Nocilis Materials launches new SiGe foundry
With niches in the IR & THz uncooled detector markets, Nocilis produces thermoelectric structures based on group IV materials.
The company is now marketing what it says is the first dedicated foundry established for supplying advanced Silicon-based materials.
Epitaxy services include RPCVD epitaxial growth on 4-, 6- and 8-inch substrates with the following descriptions:
* P-, As- and B-doped Silicon and SiGeSnC layers (doping level of 1015- 1019 cm-3 in Silicon. For Silicon alloys, doping capability is dependant on the material design)
* Selective epitaxy of doped and undoped SiGeC layers on patterned substrates
* Multilayer structures (superlattices) of Silicon or Germanium-based materials
* Unstrained Germanium on Silicon
* Compressive and tensile strained SiGe layers
* Strained Silicon on relaxed SiGe layers
* Tensile strained Germanium layers (on-going)
Further services are offered for materials characterisation of epitaxial films. These include:
* High-resolution scanning electron microscopy (HRSEM) in planar and cross-sectional view
* High-resolution x-ray diffraction (HRXRD): Reciprocal lattice mapping (RLM), grazing angle measurement, strain measurement and layer profile over the substrate area. This data provides the interfacial roughness, composition and strain parallel to and perpendicular to the plane.
