News Article
A new way to check out Mitsubishi's GaAs and GaN RF devices
Agilent's newest ADS model library includes Mitsubishi's high-power gallium nitride HEMT and low-noise HEMT devices commonly used in base station and direct-broadcast satellite receivers
Agilent Technologies' latest model library for Mitsubishi Electric's nonlinear gallium arsenide and gallium nitride RF devices is now available for use with Agilent's Advanced Design System (ADS).
The upgraded library works seamlessly with ADS 2009 Update 1, as well as prior ADS releases. ADS2011 and future versions will also be supported. The model can be obtained by contacting Mitsubishi Electric.
The library helps designers better explore design alternatives in order to meet demanding performance specifications with a cost-effective solution.
The library includes an ADS symbol for schematic capture, a simulation model that includes parasitic effects. It also covers a broad variety of body sizes and part values that enable sweeps and optimisations.
"Collaborating with a recognised world leader in design software allows Mitsubishi Electric to support and leverage its high-power and low-noise HEMT device offering," said Takao Ishida, manager of the wireless communication device application engineering section at Mitsubishi Electric's High Frequency and Optical Device Works.
"We are very pleased to offer our design kit to help support ADS users and allow them to bring superior products to the marketplace ahead of the competition."
"The combination of ADS and the Mitsubishi Electric library gives our mutual customers a powerful, integrated design solution for a fast and efficient RF design flow," said Juergen Hartung, foundry program manager of Agilent's EEsof EDA organisation. "Our customers are now able to enjoy the industry's most comprehensive multi-technology design platform with the breadth of simulation capability in ADS, including yield optimisation, DFM tools and the Momentum 3-D planar EM simulator."
Customers can also generate X-parameter models of their circuit-level designs directly from ADS. X-parameters provide fast and accurate behavioural modelling. These capabilities are vital to designing high-performance RF modules and RF system-in-package components.
