News Article
USCi to develop next generation SiC devices with Aixtron tool
The planetary reactor will be used to manufacture next generation high voltage (5-15kV) silicon carbide devices with thicknesses over 100 microns
Aixtron has announced that United Silicon Carbide, Inc. (USCi), based in Princeton, NJ, USA has ordered its VP2400 Hot-Wall CVD tool.
The order was received in the fourth quarter of 2011 and is planned to be delivered in the third quarter of 2012.
John Hostetler, Director of Engineering at USCi, comments, “Having evaluated the market for SiC epitaxy equipment, and based upon our success with merchant SiC epitaxy vendors utilising similar tools, we have selected the Aixtron VP2400HW system for the superior quality of both n- and p-type SiC epitaxial layers."
"The versatility of the 2400 system will enable USCi to rapidly develop novel device designs. The system’s ability to achieve high growth rates make it an ideal platform to develop our next generation high voltage (5-15kV) SiC devices with thicknesses in excess of 100 microns. Aixtron Planetary Reactors are becoming the standard for high volume SiC device production and our ownership of a 2400 will greatly facilitate our production process transfer to our merchant epitaxial wafer partners,” he continues.
Frank Wischmeyer, Vice President and Managing Director, Aixtron AB, Sweden adds, “Our SiC Planetary Reactor technology has continued to evolve over the past 10 years. Our extensive experience and know-how in the SiC deposition process is evident in the current design. Aixtron is pleased to partner with United Silicon Carbide as they advance SiC materials into next generation
USCi specialises in SiC devices including Schottky Barrier Diodes, JFETs, BJTs, Solid State Circuit Breakers, Power Modules, and Custom SiC integrated circuits.
