News Article
Normally-On SiC JFETs with ultra low switching losses
Key applications of the silicon carbide power devices include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating
SemiSouth Laboratories is launching the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses.
SJDP120R340 JFET
Rated at 1200V with a maximum on-state resistance of 340 mΩ (typical RDS,on of 270 mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150 °C.
Dieter Liesabeths, SemiSouth’s Director of Sales, explains, “Because of the small die size and our compact device design, the new SJDP120R340 normally on SiC trench JFETs are very cost-effective. Samples are available today; with volume production set to begin in Q2 2012 with pricing below $7 in quantities of 1000.”
