News Article
SemiSouth showcases demo board for SiC JFET evaluation
The SSJHB12R085-1 board shows the operation of the firm's silicon carbide JFETs in a cascode half-bridge configuration
Enabling a quick evaluation of the SJDP120R085 JFET, the demo board platform is suitable for many applications including boost, buck, inverter and PSU half-bridge power stage designs. In the cascode configuration, the JFET is driven via a source-connected MOSFET, allowing existing, commercially available MOSFET drivers to be used.
080212.jpg)
SSJHB12R085-1
Normally-on SJDP120R085 1200 V power JFETs enable high-speed switching, are compatible with standard gate drive circuitry, and feature a positive temperature coefficient for ease of paralleling. The JFETs have a high saturation current (27 A), low on-resistance per unit area (85 mΩ max), and improved switching performance.
The demo board comes complete with Gerber files and a BOM to allow users to build their own circuits. Dieter Liesabeths, VP of Sales and Marketing, comments, “Our SiC JFETs have industry-leading performance and we are committed to supporting them with the best available design tools.”
