News Article
Tokyo Electron sells SiC epi growth tool to Infineon
The Probus-SiC silicon carbide system will be used to volume produce advanced SiC power devices
Tokyo Electron Limited (TEL) has announced that Infineon Technologies in Germany has ordered its Probus-SiC kit.
Probus-SiC growth system
Its silicon carbide (SiC) epitaxial film growth tool, will be used for the mass production of advanced SiC power devices.
The Probus-SiC can handle film growth on substrates up to six inches. It also features automatic transfer and multi-reactor functions. It is claimed to be an ideal tool for improving device performance and productivity. This tool is scheduled to be delivered in the summer of 2012.
“We are honoured with the selection from Infineon Technologies for the Probus-SiC as a mass production tool for their advanced SiC power devices. In order to ensure the stable performance required for mass production, the Probus-SiC incorporates key design and development concepts to achieve good uniformity, low defect density, reduced surface roughness, high throughput and easy operability," says Yoichi Ishikawa, General Manager, New Product Development Division, TEL.
"With Infineon Technologies’ validation of the Probus-SiC performance and design, TEL is looking forward to the opportunity to contribute to low-cost manufacturing of high quality SiC power devices and the further expansion of the SiC power device market,” concludes Ishikawa.
