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Technical Insight

CS Europe goes out on a high

Positive vibes abounded at day two of CS Europe, with industry leaders offering insights into novel lasers, GaN-on-silicon transistors and SiC power electronics.

 The second day started where the first left off for the 246 delegates that attended CS Europe in Frankfurt, Germany. James Raring from Soraa opened the day’s talks with an account of the company’s progress with laser diodes grown on non-polar and semi-polar planes.  “Laser diodes have a heritage of inventing billion dollar markets,” explained Raring. In the past these lasers have been used to read the data of CDs, DVDs, and Blu-Ray discs, and also generate the packets of light that underpin Internet communication. And going forward, these red, green and blue sources will provide the light engines for various sizes of colour projectors. Another highlight of the day was the talk by Michael Briere, on behalf of International Rectifier, that detailed this firm’s development of GaN-on-silicon devices. Briere is expecting great things from these devices, and believes that if the penetration of wide bandgap devices into the power electronics market does not significantly exceed the predictions of market analysts, they should be viewed as a failure. During the day, delegates were also treated to insights into how to deposit ITO on LEDs in an optimal way, the tremendous opportunities for SiC power devices, and how rare-earth oxides could hold the key to making large, very flat GaN-on-silicon wafers. For more details on the conference, look in the next issue of Compound Semiconductor magazine.

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