News Article
TriQuint to update us on its GaN R&D achievements
The firm will describe its developments on E/D mode III-nitride devices and integrated gallium nitride X-band amplifiers
Scientists from TriQuint will present papers highlighting GaN advancements at the 2012 GOMACTech conference.
The convention is taking place between March 19th and March 22nd in Las Vegas. Presentations will detail state-of-the-art E/D Mode InAlN/GaN devices that deliver record high-frequency performance in DARPA-funded programs.
Integrated GaN X-band amplifiers will also be explored. The firm's new GaN X-band paper details how TriQuint researchers have integrated RF matching and bias circuits in a 66 W high-efficiency GaN device.
TriQuint's says its R&D programs set new standards while also enabling a wide selection of design-ready GaN products for commercial and defence applications.
The firm's products include a full range of FETs, MMICs, packaged transistors, high-power RF switches, and it also provides foundry services. TriQuint develops and manufactures standard and custom GaN, GaAs, SAW and BAW products.
