News Article
NTT Photonics chooses Aixtron reactor to develop lasers
The Japanese firm will use the MOCVD tool for indium gallium arsenide phosphide research
Japanese firm NTT Photonics has placed an order for an Aixtron CCS reactor MOCVD system for InGaAsP quaternary diode laser research.
Ordered in the second quarter of 2011, the reactor will be delivered in the first quarter of 2012.
A local Aixtron service support team will install the reactor at the NTT Photonics Device Laboratory in Atsugi, Kanagawa Prefecture, Japan.
Aixtron says its CCS MOCVD reactor has set new standards in laboratories and companies worldwide.
The new reactor for NTT Photonics will come with several special features including an EpiCurveTT, ARGUS, Gap Adjustment and the Epison 4 in-line gas concentration monitor.
These tools monitor the growth of the epiwafers and provide vital information for future growths .
For NTT Photonics, another important factor was the excellent Group V efficiency of the CCS reactor contributing to significantly lower operating costs.
Able to deliver very challenging MOCVD applications, the Aixtron CCS reactor has very good process flexibility thanks to the Showerhead concept and uniform flow distribution. Combined with gap adjustment and ARGUS in-situ monitoring for temperature mapping of the entire susceptor, it is suitable for research and development of high-end devices such as InGaAsP quaternary diode lasers.
