News Article
Opto Diode releases "super high-power" AlGaAs IR emitter
The first in the series of aluminium gallium arsenide based devices is suited to night vision and other military imaging applications
California based Opto Diode is releasing the first in a new series of super high-power AlGaAs infrared emitters. The new OD-110L device features an ultra high optical output with a very narrow optical beam, making it ideal for night vision (NV) and other military imaging applications. The OD-110L is housed in a standard 3-lead, hermetically-sealed TO-39 package to accommodate the compact (0.026" x 0.026") chip. There are four wire bonds on die corners and all surfaces are gold-plated for added durability. Typically, the total power output (at 250C) is 110mW and the minimum output is 55mW with a peak emission wavelength of 850nm. The absolute maximum rating at 250C (case) for power dissipation is 1000mW, with a continuous-forward-current rating set at 500mW. The OD-110L lead-soldering temperature (0.0625" from the case for 10 seconds) is 2600 C. Storage and operating temperatures range from -400 C to 1000 C, making the devices suitable for harsh environments and for integration into illuminators and markers, and systems utilising NV goggles and cameras.
