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Raytheon to make GaN-on-Diamond more than a best friend

A new technology, known as TEGaN, aims to triple the power handling capability of GaN devices

Raytheon has been awarded an 18-month, $1.8 million contract by the Defence Advanced Research Projects Agency (DARPA) to develop next-generation GaN devices bonded to diamond substrates.

The technology, known as Thermally Enhanced Gallium Nitride (TEGaN), aims to increase the power handling capability of GaN devices by at least three times.

TEGaN enables state-of-the-art transistors and monolithic microwave integrated circuits (MMICs) to achieve their full performance potential by reducing thermal resistance. TEGaN acts as a multiplier for GaN's unique qualities, which may dramatically reduce the cost, size, weight and power of defence systems. Over the course of the 18-month contract, Raytheon seeks to develop and test TEGaN's capabilities and establish a clear path to technology insertion into military systems.

The uniqueness of GaN devices allows radar, electronic warfare and communications systems to be smaller, more affordable and highly efficient.

"Raytheon continues to be at the forefront of GaN technology development," says Joe Biondi, vice president of Advanced Technology for Raytheon's Integrated Defence Systems (IDS) business. "We are pushing the envelope of this proven technology to provide our war fighters with the most advanced sensing, communications and electronic warfare capabilities in the world."
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