News Article
RFMD reveals InGaP/ GaAs 2.5GHz to 2.7GHz FEM
The FEM uses the firm's indium gallium phosphide and gallium arsenide technologies
RFMD has introduced the new RFFM7600 FEM for 2.5GHz to 2.7GHz LTE/WiMAX.
The Front End Module (FEM) employs the firm's proprietary InGaP HBT and GaAs pHEMT technologies.
RFFM7600
It contains an integrated 3-Stage Power Amplifier with Tx harmonic filtering and Tx/Rx switching. and operates at a single supply voltage of 5.0V and a typical gain across frequency band of 35dB. The device comes in a 6mm x 6mm laminate package, incorporating surface mounted devices for filtering and matching.
It is suited to applications such as customer premises equipment, data cards and terminals as well as spread-spectrum and MMDS systems.
This product is now available in production quantities. Pricing begins at $4.96 each for 100 pieces.
