News Article
SemiSouth awarded 30th SiC U.S. patent
The patent allows the silicon carbide innovator to fine tune its vertical channel junction field effect transistors and diodes to get even closer to the unipolar theoretical limit
SemiSouth Laboratories, a developer of SiC power semiconductor transistors and diodes, has secured its 30th US patent granted by the US Patent and Trademark Office.
SiC devices are rapidly gaining market share in the solar, UPS, traction, wind, automotive, and aerospace industries for their superior performance in high-efficiency, harsh-environment power applications
US Patent 8,169,022 was issued on May 1, 2012, and is entitled “Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making.” It was co-invented by Michael Mazzola, a co-founder of SemiSouth in 2000 when the company spun off of Mississippi State University.
“The underlying technology in this patent allows SemiSouth to fine tune their already performance-leading vertical channel junction field effect transistors and diodes to get ever closer to the unipolar theoretical limit. Customers can expect even better value from the products based on this patent,” says Mazzola.
“We are excited to receive our 30th US patent,” adds Jeffrey B. Casady, SemiSouth President & CTO and company co-founder. “Our technology is state-of-the-art in terms of performance per unit area. SemiSouth products deliver advanced, efficient, cost-effective power solutions that others cannot.”
In addition to 30 US patents, SemiSouth possesses 24 patents internationally and has 204 applications pending worldwide.
