News Article
RFMD reveals 9W GaN wideband power amplifier
The PA designed for use in CW and pulsed applications, employs the firm's proprietary gallium nitride HEMT technology
RFMD’s new RFHA1006 is a wideband Power Amplifier (PA) designed for use in wireless infrastructure, RADAR, two-way radios and general purpose amplification.
.jpg)
RFHA1006
Using an advanced high power density GaN semiconductor process, RFMD says these high-performance amplifiers achieve high efficiency, flat gain, and a large instantaneous bandwidth in a single amplifier module.
The device is suited to class AB operation for public mobile radio and can provide a PA stage for commercial wireless infrastructure. It can also be employed in general purpose Tx amplification, test instrumentation and in civilian and military radar applications.
This GaN transistor is packaged in an air cavity ceramic package for excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
Ease of integration is accomplished through the incorporation of optimised input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
With an output power of 9W,the device employs advanced heat-sink technology and has a 225MHz to 1215MHz instantaneous bandwidth. It is input Internally matched to 50Ω, typically operates at 28V and has an output power of 39.5dBm. The module also has a gain of16dB and power added efficiency of 60% and works in the temperature range -40°C to 85°C Large signal models are also available.
