Loading...
News Article

RFMD reveals 400MHz to 2700MHz GaAs PA

The new RFPA1012 gallium arsenide HBT linear power amplifier is specifically designed for wireless infrastructure applications

Using a GaAs HBT fabrication process, RFMD's latest high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.



RFPA1012

RFMD says the RFPA1012 is an excellent solution for 2nd and 3rd stage LNAs for wireless infrastructure. It is also suitable for use as a GaAs pre-driver for base station amplifiers and class AB operation for DCS, PCS, UMTS, and WiFi transceiver applications. 

The module has a high linearity of OIP3 = 44dBm at 900MHz and low noise (NF = 3.5dB at 900MHz). With a low DC power of 5V at 90mA, the device operates in the range of 400MHz to 2700MHz.

This product is currently available in production quantities. Pricing begins at $2.76 each for 100 pieces.
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: