Cree updates process design kit update for GaN-on-SiC HEMTs
Cree has released an updated, advanced process design kit (PDK) based on Agilent Technologies’ Advanced Design System (ADS) software. The PDK will provide microwave and RF design engineers with a comprehensive suite of design and simulation tools for developing GaN-on-SiC HEMT devices. The free PDK integrates the latest version of Agilent ADS with Cree’s GaN-on-SiC process technology parameters and design rules. Cree says engineers can now more quickly develop monolithic microwave integrated circuits (MMICs). “The latest version of this PDK enables RF design engineers to access the Cree GaN-on-SiC MMIC foundry capabilities through Agilent’s 2011 release of ADS – an industry-leading electronic design automation tool,” says Jim Milligan, director, Cree RF and microwave. “This integrated front-to-back design system provides highly accurate, scalable nonlinear models, parametric layout cells, design rule checking, seamless layout interoperability and a streamlined design cycle to help accelerate time-to-market for our customers.” “With the joint release of this PDK, our mutual customers now have access to Cree’s proven GaN-on-SiC MMIC process technology, along with the Agilent integrated design system, which is uniquely suited to producing reliable, leading edge, high-power HEMT devices for today’s most challenging applications,” comments Juergen Hartung, foundry program manager, Agilent EEsof EDA.
