News Article
RFMD flexes its muscles with new GaN transistors for pulsed-radar
The gallium nitride matched power device extends range, reduce size and weight, and improves overall ruggedness in new and existing radar designs
RF Micro Devices has just released a highly-efficient 280 W pulsed GaN RF matched power transistor, the RFHA1025.
The RFHA1025 delivers superior performance versus competing silicon power technologies.
RFMD's RFHA1025 complements the recently released 380 W RF3928B, the highest output power S-Band device in RFMD's matched power transistor family.
RFMD says its GaN matched power transistors extend range, reduce size and weight, and improve overall ruggedness in new and existing radar architectures. The RFHA1025 operates over a broad frequency range (0.96-1.2GHz) and delivers 280 W pulsed power, a gain of over 14dB, and peak efficiency of over 55%.
What's more, the RFHA1025 incorporates internal matching to simplify and shrink designers' circuits. Packaged in a hermetic, flanged ceramic package, the RFHA1025 leverages RFMD's advanced heat sink and power dissipation technologies, delivering excellent thermal stability and conductivity. RFMD's RF393x unmatched power transistors (UPT) can be used as drivers to the RFHA1025.
Jeff Shealy, general manager of RFMD's Power Broadband Business Unit, says, "RFMD is pleased to expand our GaN-based product portfolio, offering industry-leading power performance in support of diverse end markets. RFMD's GaN product portfolio demonstrates our commitment to technology and product leadership, and we look forward to introducing additional GaN devices in the near term that feature superior power density, high power efficiency, and rugged dependability."
Samples and production quantities are available now through RFMD's online store or through local RFMD sales channels.
