News Article
New high-performance GaAs PAs from RFMD
The devices expand the company's portfolio of radio chipsets targeting cellular backhaul and other markets and rely on the firm's gallium arsenide pHEMT technology
RF Micro Devices is introducing three new power amplifiers for high-frequency point-to-point radio applications.
The RFPA1002, RFPA1003, and RFPA1702 deliver over1W RF output power in the 10GHz to 20GHz frequency bands.
By delivering exceptional power output, linearity and gain, RFMD's RFPA1002, RFPA1003, and RFPA1702 help to satisfy the increasing capacity and performance requirements of next-generation point-to-point radio systems.
All the high-frequency GaAs PAs are packaged in a 6x6 mm QFN, combining low-cost packaging with excellent electrical performance.
In addition to the point-to-point radio market, the RFPA1002, RFPA1003, and RFPA1702 are ideally suited for satellite communications, military radar, and electronic warfare applications. RFMD's expanding portfolio of microwave radio chipsets also includes upconverters, downconverters, VCOs, and gain blocks.
RFMD is exhibiting the RFPA1002, RFPA1003, and RFPA1702 at the IEEE International Microwave Symposium through June 22nd, in booth #1210 at the Palais des congres convention centre in Montreal, Canada.
Samples and production quantities are available now through RFMD's online store or through local RFMD sales channels.
