News Article
Toshiba's new C-band GaAs FET PAs target microwave applications
The improved gain of the new gallium arsenide devices will help microwave designers reduce the number of parts in their overall system
Toshiba America Electronic Components (TAEC) has expanded its GaAs field effect transistor (FET) line-up with two new devices optimised for power efficiency.
The new power added efficiency enhanced GaAs FETs are targeted to microwave radios and block up convertors (BUCs). They will be exhibited in TAEC's booth #2710, at the 2012 IEEE MTT-S International Microwave Symposium from June 19th through 21th in Montreal, Quebec, Canada.
Toshiba's new C-Band GaAs FETs for microwave digital radios support point-to-point and point-to-multipoint terrestrial communications, and BUCs support satellite communications. The TIM5359-16EL and the TIM5964-16EL operate in the 5.3 to 5.9 GHz range and the 5.9 to 6.4 GHz range respectively.
The TIM5359-16EL and TIM5964-16EL have an output power at one-dB gain compression point of 16W, or 42.5dBm (typ.), linear gain at one-dB gain compression point of 11.5dB (typ.) and power added efficiency of 38 percent.
"High gain and high power added efficiency features will help designers build energy-efficient microwave radios," notes Homayoun Ghani, business development manager, microwave devices, for TAEC's Discrete Business Unit.
"By combining our new 16W product along with the linearity enhanced broadband C-Band 4W microwave monolithic integrated circuit (MMIC), Toshiba's TMD0608-4, a simple two-chip design solution is provided for microwave radio applications. The improved gain will help microwave designers reduce the number of parts in their overall system."
Samples of the Toshiba high gain GaAs FET family are available now.
