News Article
Hybrid GaN IC for X-band revealed by Toshiba
The gallium nitride HIC is optimised for high gain and high powerand is suited to AESA, and PESA radar applications
Toshiba America Electronic Components, Inc. (TAEC) is introducing a new GaN hybrid IC (HIC), which is optimised for high gain and power.
Available in small hermetically-sealed packages, the gain-enhanced HIC is targeted to transmitter and receiver modules (TRMs) used in radar applications - such as active electronically scanned array (AESA) and passive electronically scanned array (PESA).
Toshiba will be exhibiting the new HIC in booth #2710 at the 2012 IEEE MTT-S International Microwave Symposium from June 19th through 21st in Montreal, Quebec, Canada.
The new X-Band hybrid IC, the TGM9398-25, operates in the 9.3 to 9.8 GHz range, and has output power at 1dB of 25W, or 44.0dBm (typ.), linear gain of 25dB (typ.) and power added efficiency of 35 percent.
Toshiba commercially launched the 50W discrete GaN internally-matched HEMT for the band, the TGI8596-50, in 2008 and the TGI0910-50, in 2010. The new device is in a package that is footprint-compatible with the existing discrete internally-matched GaN HEMT, to support easy upgrades for legacy designs.
"The high power density of GaN technology makes this possible," says Homayoun Ghani, business development manager, microwave devices, for TAEC's Discrete Business Unit. "With the energy-saving features associated with higher gain, this hybrid IC will help our customers design more advanced telecommunication systems."
Samples of Toshiba's GaN hybrid IC will be available in Q4 2012.
