Toshiba unveils Ka-band high power GaN MMIC for SATCOM
Toshiba America Electronic Components, Inc. (TAEC), a company that collaborates with technology companies to create breakthrough designs, has unveiled a Ka-Band High Power GaN microwave monolithic integrated circuit (MMIC) featuring one of the highest power and efficiency performances in its class. Toshiba is planning to release a complete family of Ka-Band products to support SATCOM applications. Ka-Band SATCOM has been on the rise, and is continuing to show steady growth to support broadband communication and increasing demand for higher bandwidth in SATCOM frequencies. Due to the limited availability of high power microwave Solid-State devices, replacing tube-base amplifiers with Solid-State Power Amplifiers for Ka-Band has not been a cost-effective design option. Toshiba's new Ka-Band MMIC will provide a solution to support the anticipated surge of solid-state amplifiers to the millimetre wave frequency range for SATCOM applications. "As a longtime supplier of high-performance GaN and gallium arsenide microwave devices for wireless applications in various frequency bands, Toshiba plans to continue efforts to expand the product line with new solutions," says Homayoun Ghani, business development manager, microwave devices, for TAEC's Discrete Business Unit. A datasheet for Toshiba's new MMIC will be available in Q4 2012, with sampling beginning Q1 2013.
