Cree Reveals Verilog-A RF Device Models To Accelerate GaN Adoption
The products are targeted towards improving 4G/LTE telecom infrastructures. The aim is to quicken time to market and provide rapid simulation of complex waveforms such as W-CDMA and OFDMA
Cree is releasing a new suite of Verilog-A proprietary non-linear device models for its GaN RF devices, developed for use with leading RF design platforms from Agilent ADS and AWR Microwave Office.
The new device models support more complex circuit simulations including modulation envelope analysis for use in the latest innovative broadband and multi-mode RF power amplifiers for 4G cellular telecommunications.
“The release of this new suite of device models enables RF design engineers to predict non-linear performance using harmonic balance, conduct robust transient analysis as well as use ‘real-world’ arbitrary modulation signals with envelope simulation for Cree’s GaN HEMT devices," says Jim Milligan, director RF and microwave, Cree.
“The Verilog-A models, together with envelope simulators, allow designers to directly investigate higher efficiency circuit approaches, such as Doherty amplifiers, to improve adjacent channel power ratios, spectral re-growth and error vector magnitude, while assessing if amplifier performance meets spectral mask requirements for LTE deployments. As these models also take advantage of multi-core processors, simulation times can be greatly reduced."
“Transient analysis allows insight into switched-mode power amplifier configurations that may also be driven directly from digital signals," adds Ray Pengelly, RF business development manager, Cree. “Combined with such approaches as Chireix out-phasing, unprecedented efficiencies of greater than 70 percent have been demonstrated."
The models are available free to Cree’s RF customers. Visit Cree at the 2012 International Microwave Symposium, Booth #2125, to see the latest Cree innovations.
Verilog-A is an industry-standard language used to describe transistor behavior for simulation purposes.