News Article
Veeco to present at nitrides growth symposium
The firm will describe its results on reactant injector temperature effects on III-nitride materials deposited in an MOCVD reactor
Veeco Instruments will be exhibiting and presenting at the International Symposium on Growth of III-Nitrides (ISGN4) on Wednesday, July 16-19, 2012 in St. Petersburg, Russia.
The symposium is part of a biannual series focusing on the growth of III-Nitride materials, nanostructures and device structures.
Alex Gurary, Ph.D., Veeco’s Senior Director, MOCVD Hardware Test, will present “Reactants injector temperature effect on III-Nitrides materials deposition in the high speed vertical rotating disc MOCVD reactor.” Gurary has a Ph.D. in Material Science and over 20 years of experience with MOCVD equipment.
Veeco’s MOCVD equipment for high brightness LED production deliver excellent wavelength uniformity, high footprint efficiency and a range of single and multi-reactor platforms that offer the best cost of ownership solutions in the industry.
The ISGN4 symposium is organised by the Ioffe Physical-Technical Institute of Russian Academy of Sciences. Launched in Sweden in 2006, then Japan in 2008, France in 2010 and now Russia, it is the fourth symposium in a biannual series focusing specifically on growth of III-Nitride materials, nanostructures and device structures.
