Two inch free-standing SI GaN substrates on the market
Xiamen Powerway Advanced Material (PAM-Xiamen) has announced the availability of 2" size native semi-insulating GaN (SI GaN) substrates. This new product represents a natural addition to PAM-Xiamen's native SI GaN substrate product line, which also includes 10mm x 10mm,25mm x 25mm and 38mm x 38mm substrates. Dr. Shaka, a spokesperson for the company, said, "We are pleased to offer larger native SI GaN to our customers including many who are developing better and more reliable high frequency high power GaN transistors. Our 50mm dia.native SI GaN product has excellent resistivity properties just like our smaller SI GaN substrates, as corroborated by recent electrical resistivity mapping measurements carried out. The larger size and availability improve our native SI GaN boule growth and wafering processes." "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a larger square substrate. Our larger square SI GaN substrates are natural by products of our ongoing efforts, currently we are devoted to continuously develop round three-inch and four-inch native SI GaN substrates," continued Shaka. Pam-Xiamen's improved SI GaN product line has benefited from strong technical support from Native University and Laboratory Centre. Found in 1990, PAM-Xiamen is a manufacturer of compound semiconductor materials in China. Pam-Xiamen develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices and wafers. Pam-Xiamen has been involved in GaN research since 2001. In 2009, the firm began mass production of GaN-on-sapphire and freestanding GaN single crystal wafer substrates which are used in UHB-LED and laser diode manufacturing. Grown by hydride vapour phase epitaxy (HVPE),Pam-Xiamen's native (free-standing) GaN can be grown in customer-defined orientations. These include polar (c-plane Ga-face or N-face) and non-polar (a-plane and m-plane), GaN and AlN templates grown on sapphire and silicon or SiC substrates, and ultra-high purity polycrystalline GaN.
