News Article
TriQuint GaN devices promise better RF efficiency
Latest power amplifiers and transistor boast better RF performance while reducing overall cost
GaN-based RF device developer, TriQuint Semiconductor, has released three new power amplifiers and a transistor.
The GaN power amplifiers promise to deliver greater efficiency, wideband coverage and excellent performance for communications, defense and civilian radar.
Three versions have been developed, the TGA2572-FL,14-16 GHz, the TGA2579-FL, 14-15.5 GHz) nd the TGA2593-GSG, 13-15 GHz.
Meanwhile, the T1G6003028-FS, a 30W wideband GaN packaged transistor, promises to cut the number of driver circuits in a typical power amplifier design by 50%.
“TriQuint is advancing state-of-the-art high frequency and high power GaN research," said TriQuint defense products and foundry services vice president James Klein. "Our internal product development programs are creating new commercial and defense lower-voltage devices."
According to the company, GaN-based integrated circuits outperform silicon, gallium arsenide and other semiconductor technologies.
The devices are considered to be crucial to future ‘green’ RF and DC-DC power solutions, that can can reduce network electrical consumption, enable greater range in electric vehicles or extend smartphone battery life.
