Anadigics powers Samsung Galaxy smartphone
Anadigics is shipping production volumes of its dual-band “High-Efficiency-at-Low-Power” (HELP3E) power amplifiers to Samsung Electronics for the new Galaxy S III smartphone.
The Galaxy S III features a 4.8 inch HD Super AMOLED display, eight megapixel rear-facing camera, 1.5GHz dual-core processor, and Android 4.0 Ice Cream Sandwich operating system.
Anadigic's AWC6323 power amplifier enables the Galaxy S III from Verizon Wireless, US, while its AWC6325 and ALT6725 power amplifiers are featured in the Galaxy S III from Sprint, US.
“Anadigics' power amplifiers continue to set the standard in both performance and integration,” said Michael Canonico, senior vice president of worldwide sales. “They are supported by our team of applications engineers to help manufacturers quickly bring to market advanced smartphones with longer battery-life and uncompromising designs.”
The latest power amplifiers are manufactured using InGaP-Plus – Anadigics' GaAs BiFET process technology - to achieve optimal efficiency across low-range and mid-range output power levels and provide low quiescent currents.
As the company highlights, this level of performance helps to extend battery-life in handsets, smartphones, tablets, netbooks, and notebooks.
These 3 mm by 5 mm dual-band PAs feature two independent power amplifiers, RF couplers, control logic and a voltage regulator in a single package, reducing printed circuit board (PCB) space requirements by greater than 20% compared with single band discrete solutions.
The InGaP-Plus process uses previously developed process modules and is only moderately more complex than a stand-alone HBT flow. According to Anadigics, tens of millions of WLAN and cellular handset PAs have been manufactured using InGaP-Plus with yields comparable to HBT-only processes.
