Hittite unveils GaAs power amplifiers
US-based Hittite Microwave has launched two new power amplifier products which are said to be ideal for microwave radio, EW, ECM and radar applications to 28GHz. Also released is a unique wideband LNA which operates from 300MHz to 20GHz and is ideal for wideband multi-chip-module and subsystem applications. The HMC994LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 28GHz. The amplifier provides 13dB of gain, +29dBm of saturated output power, and 23% PAE from a +10V supply. With up to +38dBm Output IP3, the power amplifier is suited to high linearity applications in military and space as well as point-to-point and point-to-multi-point radios. The HMC998LP5E is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 100MHz and 20GHz. The amplifier provides 11dB of gain, +41 dBm output IP3, and +31 dBm of output power at 1 dB gain compression while requiring only 500mA from a +15V supply. Both devices exhibit very flat gain, which Hittite says makes them ideal for EW, ECM, radar and test equipment applications. Each is supplied in leadless QFN 5 x 5mm surface mount packages and feature I/Os that are internally matched to 50Ohms. The HMC1049 is a GaAs MMIC pHEMT low noise amplifier die which operates between 300MHz and 20GHz and employs a novel topology which maintains an excellent low noise figure of 1.7dB at low frequencies. The amplifier also delivers 16dB of small signal gain and output IP3 of +27dBm, while requiring only 70 mA from a +7V supply. The P1dB output power of +16 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC1049 is internally matched to 50Ohms for ease of integration into multichip-modules (MCMs). Hittite has also released the HMC1048LC3B, a GaAs MMIC, general purpose, double-balanced mixer that can be used as a downconverter with DC to 4GHz at the IF port and 2 to 18GHz at the RF port.
