News Article
M/A COM's HEMT targets radar applications
The firm's depletion mode HEMT microwave pulsed power transistor features broadband operation at +50 V. The gallium nitride device is suited to civilian and military pulsed radar applications
M/A-COM Technology Solutions, a supplier of analogue semiconductor solutions, has revealed a new highly efficient 40 W pulsed power transistor.
The GaN based MAGX-002735-040L00 is optimised for civilian and military pulsed radar applications between 2.7 and 3.5 GHz.
MAGX-002735-040L00
The device is a gold metalized, internally matched, GaN on SiC RF power transistor. It exhibits excellent performance when operated at +50 V, class AB operation, 40 W peak output, using a 300 µs pulse and 10% percent duty cycle pulsed signal.
The transistor provides high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding needs.
Based on extensive HTOL RF accelerated life testing, quantifiable test results demonstrate this product is designed to provide an MTTF of 600 years or better.
“The 800 MHz of instantaneous bandwidth and rugged performance makes this versatile device an excellent choice as a driver stage or output stage for any s-band radar power amplifier application,” said Gary Lopes, Senior Director for RF Power Technologies.
Manufactured in a thermally enhanced, Cu/Mo/Cu, flanged ceramic package, the MAGX-002735-040L00 boasts excellent thermal performance as well as high breakdown voltages that allow for reliable and stable operation in extreme mismatched load conditions. Operating at +50 V, class AB, the pulsed power transistor provides 40 W of peak power at 55 percent drain efficiency with a minimum gain of 10.5 dB across the full 2.7 to 3.5 GHz frequency band.
Production quantities and samples of MAGX-002735-040L00 are available from
The GaN based MAGX-002735-040L00 is optimised for civilian and military pulsed radar applications between 2.7 and 3.5 GHz.
MAGX-002735-040L00
The device is a gold metalized, internally matched, GaN on SiC RF power transistor. It exhibits excellent performance when operated at +50 V, class AB operation, 40 W peak output, using a 300 µs pulse and 10% percent duty cycle pulsed signal.
The transistor provides high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding needs.
Based on extensive HTOL RF accelerated life testing, quantifiable test results demonstrate this product is designed to provide an MTTF of 600 years or better.
“The 800 MHz of instantaneous bandwidth and rugged performance makes this versatile device an excellent choice as a driver stage or output stage for any s-band radar power amplifier application,” said Gary Lopes, Senior Director for RF Power Technologies.
Manufactured in a thermally enhanced, Cu/Mo/Cu, flanged ceramic package, the MAGX-002735-040L00 boasts excellent thermal performance as well as high breakdown voltages that allow for reliable and stable operation in extreme mismatched load conditions. Operating at +50 V, class AB, the pulsed power transistor provides 40 W of peak power at 55 percent drain efficiency with a minimum gain of 10.5 dB across the full 2.7 to 3.5 GHz frequency band.
Production quantities and samples of MAGX-002735-040L00 are available from
