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Taiwanese university enlists Aixtron to develop GaN-on-Silicon

The reactor will be used for the MOCVD growth of 6" gallium nitride on silicon power devices
Aixtron SE has a new MOCVD system order from existing customer National Central University (NCU) in Taiwan.

NCU has placed an order for one 1 x 6-inch Aixtron Close Coupled Showerhead MOCVD system, which will be dedicated to the growth of GaN epitaxial structures on 6-inch silicon substrates for use in the research and development of power management devices.

Aixtron’s local support team has installed and commissioned the new reactor in the cleanroom facility at NCU’s Microwave and Optoelectronic Devices Laboratory.

Jen-Inn Chyi, Chair Professor of Electrical Engineering at the National Central University of Taiwan, comments, “Demand for low-cost GaN-based power devices in high-efficiency and high-power systems continues to increase. To satisfy this need we therefore plan to transfer our specially developed semiconductor materials technology to industry, for a pilot initially, and then for large-scale production."

Chyi continues, " In order to succeed in this venture, the very best deposition equipment will be required, such as the Aixtron multi-wafer MOCVD system on order. This system is an excellent match for the heteroepitaxial growth of gallium nitride structures on large area silicon wafers, with a view to providing high-performance devices as cost-efficiently as possible. Furthermore, the excellent reputation of the Aixtron support service gives us great confidence for this very important new project.“

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